Numerical Simulation of Semiconductor Devices and Circuits for THz Applications

Promoter: DFG/FWF

Duration: 36 Monate

Projectstart: 1.2.2017

Projectpartner: RWTH Aachen

Electromagnetic waves with a frequency in the range from 0.1 to 10 THz are referred to as THz waves. They are difficult to generate, because their frequencies are on the one hand too high for efficient operation of state of the art solid-state devices and on the other too low for optical generators.

This led to the proposal of a new kind of solid-state devices based on plasma waves in quasi 2D electron gases, where the THz signal is generated directly within the device. Since the dispersion relation of the plasma waves, their instabilities and the gain of the device depend on the structure, permittivity of the materials, dimensionality of the electron gas and its density, boundary conditions etc., it gives the device designer a lot of freedom and various device concepts have been proposed. For accurate prediction of the device performance simulation engines employing an approach beyond the standard models are required.

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